报告题目:Epitaxial Quantum Nanostructures: From Atomistic Growth Kinetics Controlled Synthesis to Single Photon Source Arrays

报  告  人:Anupam Madhukar,Professor of Physics, Mat. Sc. & EE, University of Southern California

报告时间:14:30 pm, Thursday, December 7, 2017

报告地点:Lecture Hall C302, New Science Building

报告摘要:Controlled epitaxial growth of semiconductor A on B is at the core of the vast majority of semiconductor electronic and photonic nanoscale devices and the system architectures they end up dictating. Much of the underpinning conceptual framework and operational descriptions of epitaxy invoke, implicitly or explicitly, behavior associated with the thermodynamic ground state of a closed system of atoms, typically without demonstrable evidence. Indeed, to the contrary, much of the existence of such systems is itself evidence for their metastability-- arising from the operational competing atomistic kinetics of a changing set of multiple stochastic processes-- controlling the nature of local atomic spatial arrangement of an open system on a length scale that itself is the outcome of a time scale resulting from the locally competing kinetics. In this talk I will emphasize this typically overlooked essence of epitaxy and connect its consequences for the formation of epitaxial quantum dots in lattice matched and mismatched semiconductor systems, the resulting fluctuations in their electronic states, and their potential for exploitation as single photon sources for on-chip integrated quantum optical circuits.