侯清润

副教授

 

清华大学物理系

第六教学楼6B805

北京 100084

 

电话:010-62782872

传真:010-62781604

 

houqr@mail.tsinghua.edu.cn

 

个人网页:

 
个人简历
教育:  

山东大学  物理系 学士学位 (1985年)

中国科技大学研究生院 半导体物理学 硕士学位 (1990年)

香港大学 物理系 固体物理学 博士学位  (1999年)

 

工作经历

东北林业大学 物理系 助教(1985-1987)

华北光电研究所 工程师(1990 – 1996)

清华大学 物理系 副教授(1999 – 至今)

教学
大学本科“近代物理实验”和 “普通物理实验”
研究领域
1. 过渡金属硅化物薄膜的制备与分析  

   (1) Seebeck 系数和电阻率随温度的变化

   (2) 单晶薄膜的生长

   

2. 过渡金属碳化物薄膜的制备与分析

   (1)电阻率随温度的变化

   (2)单晶薄膜的生长

   (3)薄膜的机械性能(如硬度,杨氏模量等)

奖励、荣誉和学术兼职

 

主要论著

发表研究论文30余篇,被他人引用多次。  

 

主要论文 

Semiconductor Physics

1.Light induced rapid thermal diffusion of boron atom in silicon,

W.Q. Shi, Q.R. Hou, X.J. Liu, et al., Chinese Phys. Lett. 9, 375 (1992).

 

CdZnTe and HgCdTe crystal growth

1.Vertical Bridgman seeded growth of CdZnTe crystals,

 Q.R. Hou, J.A. Chen, L.M. Zhao, and X.M. Zhang, Rare Metals 2, 126 (1994).

2.Vertical gradient greeze growth of CdZnTe crystals with Zn/Cd reservoir,

Q.R. Hou, J.Y. Wang, J.C, Deng, et al., Rare Metals 4, 287 (1994).

3.Vertical gradient greezing growth of HgCdTe,

Q.R. Hou, J.Y. Wang, J.C. Deng, et al., Rare Metals 14, 258 (1995).

 

Mechanical properties of diamond-like carbon films

1.Pulsed laser deposition of diamond-like carbon films under a magnetic field,

Q.R. Hou and J. Gao, J. Phys. Condensed Matter 9, 10333 (1997).

2.Micro-hardness and adhesion of boron carbon nitride coatings,

Q.R. Hou and J. Gao, Mod. Phys. Lett. B 11, 749 (1997).

3.Adherent SiC coatings on Ni-Cr alloys with a composition-graded interlayer,

Q.R. Hou, J. Gao, and S.J. Li, Appl. Phys. A 67, 367 (1998).

4.Influence of a magnetic field on deposition of DLC films,

Q.R. Hou and J. Gao, Appl. Phys. A 67, 417 (1998).

5.Enhanced adhesion of DLC films with a composition-graed intermediate layer,  

Q.R. Hou and J. Gao, Appl. Phys. A 68, 343 (1999).

6.Adhesion and its influence on micro-hardness of DLC and SiC films,

Q.R. Hou, J. Gao, S.J. Li, Eur. Phys. J. B 8, 493 (1999).

 

Thermoelectric properties of transition metal silicides

1.Preparation of adherent MnSix films,

Q.R. Hou, Z.M. Wang, Y.B. Chen, and Y.J. He, Mod. Phys. Lett. B 16, 205(2002).

2.The effect of oxygen on the formation of manganese silicide,

Q.R. Hou, Z.M. Wang, and Y.J. He, Mod. Phys. Lett. B 16, 1135 (2002)

3. Thermoelectric properties of manganese silicide films,
Q. R. HOU, Z. M. WANG, Y. J. HE, Appl. Phys. A 80, 1807 (2005).
4. Thermoelectric properties of higher manganese silicide films with addition of carbon,
Q. R. HOU, W. ZHAO, H. Y. ZHANG, Y. B. CHEN, Y. J. HE,
Phys. Status Solidi A 203, 2468 (2006).
5. Mechanical and thermoelectric properties of higher manganese silicide films
Q. R. HOU, Y. B. CHEN, Y. J. HE, Mod. Phys. Lett. B 20, 877 (2006).
6. Thermoelectric properties of higher manganese silicide films with addition of chromium,
Q.R.Hou, W.Zhao, Y.B,Chen, D.Liang, X.Feng, H.Y.Zhang and Y.J.He, Appl. Phys. A 86,385(2007)
7. Characterization of p- and n-type MnSi1.7 films by Auger electron spectroscopy
Q.R.Hou, W.Zhao, H.Y.Zhang, Y.B,Chen and Y.J.He,
Mod. Phys. Lett. B 21, 1077 (2007).
8. Thermoelectric properties of p-type higher manganese silicide films prepared by solid phase reaction and reactive deposition,
Q.R.Hou, W.Zhao, Y.B,Chen, D.Liang, X.Feng, H.Y.Zhang and Y.J.He, Phys. Stat. Sol. (a) 204, 3429 (2007).
9. Thermoelectric properties of MnSi1.7 films with addition of aluminum and carbon
Q.R.Hou, D.Liang, X.Feng, W.Zhao, Y.B.Chen, Y.J.He, Mod. Phys. Lett. B 21, 1447(2007).
10. Thermoelectric power of nanoscale MnSi1.7 films
Q.R.Hou, W.Zhao, Y.B.Chen, and Y,.J.He, Phys. Stat. Sol. A 205, 2687 (2008).
11. Preparation of n-type higher manganese silicide films by magnetron sputtering
Q.R.Hou, W.Zhao*, Y.B.Chen, and Y.J.He,Int. J. Mod. Phys. B 23, 3331(2009).
12. Influence of oxygen impurity on Seebeck coefficient of nano-scale MnSi1.7 films
Q. R. Hou, Y. B. Chen, Y. J. He, Mod. Phys. Lett. B 23, 2421 (2009).
13. Preparation of n-type nano-scale MnSi1.7 films by addition of iron
Q.R.Hou, W.Zhao*, Y.B.Chen, and Y.J.He, Mater. Chem. Phys. 121, 103(2010).
14. Seebeck effect of nano-scale p-type silicon films above room temperature
Q. R. Hou, B. F. Gu, Y. B. Chen, Mod. Phys. Lett. B 24, 2457(2010).
15. Preparation of nano-crystalline SiC films with high Seebeck coefficient and low electrical resistivity,
Q.R.HOU, B.F.GU, Y.B.CHEN, NANO 6 (2011) 167.
16. Enhancement of thermoelectric power factor by a silicon spacer in modulation-doped Si-HMS-Si,
Q.R.HOU, B.F.GU, Y.B.CHEN, Y.J.HE, NANO 6 (2011) 481.  
17. Influence of silicon addition on Seebeck coefficient of MnSi1.7 films
Q. R. HOU, B.F.GU, Y. B. CHEN, Y. J. HE, Int. J. Mod. Phys.  B 25 (2011) 2393.
18. Phonon-drag effect of ultra-thin FeSi2 and MnSi1.7 / FeSi2 films
Q.R.HOU, B.F.GU, Y.B.CHEN, Y.J.HE, Mod. Phys. Lett.B 25 (2011) 1829.
19. Thermoelectric properties of MnSi1.7, Y.J.HE, Q. R. HOU, Z.M.WANG,
Y. B. CHEN, Proceedings of 2011 International conference on materials for renewable energy and environment, IEEE, Shanghai, China, (2011) 1343.
20. Magnetic properties of Fe0.95Co0.05Si2 semiconducting film,
Y.P.HAN, X.J.WANG, Q.R.HOU, Q.W.WANG, J.X.WANG, . Mod. Phys. Lett. B 26 (2012) 1250097.
21. Thermoelectric effect of silicon films with shallow- and deep-level acceptors,
Q.R.HOU, J.L.SUN, B.F.GU, Y.B.CHEN, Y.J.HE,
Int. J. Mod. Phys. B 26 (2012) 1250187.
22. Thermoelectric effect of silicon films prepared by aluminum-induced crystallization,
Q.R.HOU, B.F.GU, Y.B.CHEN, Y.J.HE, International Journal of Minerals, Metallurgy and Materials19 (2012) 957.
23. Enhancement of thermoelectric power factor of MnSi1.7 films by Si addition and modulation doping,
Q.R. HOU, B.F.GU, Y.B.CHEN, Y.J.HE, Phys. Status Solidi A 209 (2012) 1307.