报告人:任宏文,Applied Optoelectronics Inc.
报告时间:6月14日下午四点
报告地点:物理系三楼报告厅
报告题目:MBE Manufacturing of InGaAsP Lasers
报告摘要:I would like to introduce our breakthroughs to make the MBE technology a high performance and reliability, high yield and throughput manufacturing tool for 1.3-1.55um InP/InGaAsP laser diodes over both ridge waveguide and buried-heterostructure platforms. In addition, process flows and product characteristics for communication applications will be presented.