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MBE Manufacturing of InGaAsP Lasers

2020-08-26    点击:

报告人:任宏文,Applied Optoelectronics Inc.

报告时间:6月14日下午四点

报告地点:物理系三楼报告厅

报告题目:MBE Manufacturing of InGaAsP Lasers

报告摘要:I would like to introduce our breakthroughs to make the MBE technology a high performance and reliability, high yield and throughput manufacturing tool for 1.3-1.55um InP/InGaAsP laser diodes over both ridge waveguide and buried-heterostructure platforms. In addition, process flows and product characteristics for communication applications will be presented.