报告人：任宏文，Applied Optoelectronics Inc.

报告时间：6月14日下午四点

报告地点：物理系三楼报告厅

报告题目：MBE Manufacturing of InGaAsP Lasers

报告摘要：I would like to introduce our breakthroughs to make the MBE technology a high performance and reliability, high yield and throughput manufacturing tool for 1.3-1.55um InP/InGaAsP laser diodes over both ridge waveguide and buried-heterostructure platforms. In addition, process flows and product characteristics for communication applications will be presented.